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dc.contributorPeterson, Marken_US
dc.contributorDavis, Michaelen_US
dc.contributor.advisorHudgings, Janiceen_US
dc.contributor.authorKapusta, Evelynen_US
dc.date.accessioned2011-02-16T13:47:18Z
dc.date.available2011-02-16T13:47:18Z
dc.date.issued2011-02-16
dc.date.submitted2005-05-23 07:10:54en_US
dc.identifier.urihttp://hdl.handle.net/10166/719
dc.description.abstractSemiconductor lasers are extremely sensitive to back-reflections that arise in practical applications, potentially resulting in mode hopping, coherence collapse, strong excess noise, and chaotic dynamics. When semiconductor lasers are integrated into photonic integrated circuits (PICs), the lack of direct optical access compounds this difficulty because traditional optical methods of monitoring and controlling optical feedback are unavailable. We show that the magnitude of optical feedback into a semiconductor laser can be quantified based on surface temperature measurements alone, without recourse to direct optical measurements, so this technique is ideally suited for lasers integrated into PICs. We examined the surface temperature (Ts), heat sink temperature (Ths), and ambient temperature (Ta) of a 5 quantum well InGaAsP/InP cleaved-facet laser coupled to a 38 cm long external optical cavity using 25x25 micrometer^2 NIST-traceable microthermocouples. We combined our experimental measurements with a total energy balance model for the laser: Prad = Pel - Pcond - Pconv ≡ IV - (Ts-Ths)/ZT - Aeffh(Ts-Ta) (1) The electrical power Pel generated in the laser is dissipated through conduction Pcond, convection Pconv, and radiative power Prad due to photons emitted by the laser. The thermal impedance ZT=15.0K/W and area-weighted heat transfer coefficient Aeffh=2.8mW/K were determined experimentally while operating the laser below threshold. Monitoring the measured difference, Ts-Ths, as the bias current to the laser was increased, we observed the expected rise in the surface temperature proportional to the electrical power below threshold with Prad=0. Above threshold, reduction in the slope occurs as emitted photons remove energy from the laser.2 When the laser is exposed to optical feedback, a fraction  of the reflected light is coupled into the lasing mode, while the remaining fraction (1-p) is absorbed at the facet. Thus, the radiated power is: Prad = Pout PoutRext(1-p), (2) where Pout is the optical power emitted and Rext=91% is the reflectivity of the external cavity. From our temperature measurements, using equation 1 and 2, we found the radiated power emitted by the laser without recourse to direct optical measurements. Comparing our results from this method and direct optical measurements we found a strong quantitative agreement for both cases, with and without feedback.en_US
dc.description.sponsorshipPhysicsen_US
dc.language.isoen_USen_US
dc.subjectedgeen_US
dc.subjectemittingen_US
dc.subjectsemiconductoren_US
dc.subjectlasersen_US
dc.subjectoptical feedbacken_US
dc.subjectthermal profilingen_US
dc.titleUsing Thermal Profiling to Monitor Optical Feedback in Semiconductor Lasersen_US
dc.typeThesisen_US
dc.date.gradyear2005en_US
mhc.institutionMount Holyoke Collegeen_US
mhc.degreeUndergraduateen_US
dc.rights.restrictedpublic


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