An Analysis of Regioregular Poly(3-hexylthiophene-2,5-diyl) Using Kelvin Probe Force Microscopy

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2016-07-01

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Abstract

There is a constant push for innovative applications of electronics. The traditional materials used to construct these devices, such as inorganic silicon, are expensive and brittle. Semiconducting conjugated polymers offer an exciting alternative to manufacturing materials, as they are flexible and affordable to mass-produce. A significant amount of work has been done in the field of organic electronics since conjugated polymers were first found to be conductive several decades ago. The approaches to studying the characteristics of these materials are varied including simulations, dielectric spectroscopy, electrostatic force microscopy, and scanning Kelvin probe microscopy. Groups have looked at how to evaluate charge carrier mobility, threshold voltage, trapping/detrapping processes and time scales, the shape and behavior of the density of states, and pinch off voltage. The focus of our interest is on understanding charge carrier transport, mobility, and the effects of trap states of these characteristics. This is studied through an unconventional use of KPFM as well as standard IV characterization. While other research groups have previously modeled trap states, we hope to understand how different manufacturing processes passivate traps to improve mobility and how the behavior of trap states change at different back gate voltages. This work will discuss our approach to studying P3HT, a polymer of choice for its good optoelectronic properties. We use atomic force microscopy to record traditional IV transistor curves as well as use KPFM to scan across the transistor channel and record the behaviors of charge carriers at a single point on the device

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Keywords

P3HT, physics, thin films, FET, KPFM, Kelvin Probe Force Microscopy

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